Inverse-designed silicon nitride wavelength demultiplexers bridging the visible and telecom bands
TL;DR
Two compact (6 × 8 µm²) silicon-nitride wavelength demultiplexers, inverse-designed to bridge the 600/1550 nm and 600/1310 nm bands — the first deMUXes directly connecting the visible and telecom regimes. Insertion loss is below 0.75 / 0.68 dB and crosstalk below −18.6 / −20.6 dB at the centre wavelengths, with an 80 nm minimum feature size.
Highlights
- First SiN deMUXes bridging visible and telecom bands (600/1550 nm and 600/1310 nm)
- Compact 6 × 8 µm² footprint; 80 nm minimum feature on a 350 nm SiN platform
- Visible/C-band IL 0.35/0.75 dB (CT −18.6/−21.1 dB); visible/O-band IL 0.21/0.68 dB (CT −20.6/−23.4 dB)
- Edge-guided analog-and-digital optimization (EG-ADO) extended to multi-band design
Citation
A. Sun et al., "Inverse-designed silicon nitride wavelength demultiplexers bridging the visible and telecom bands," IEEE Photonics Conference (IPC), Singapore, Nov. 2025.